vishay tlc.58.. document number 83178 rev. 2, 03-apr-03 vishay semiconductors www.vishay.com 1 94 8631 ultrabright led, ? 5 mm untinted non-diffused \ description the tlc.58.. series is a clear, non diffused 5 mm led for high end applications where supreme luminous intensity and a very small emission angle is required. these lamps with clear untinted plastic case utilize the highly developed ultrabright alingap and gap technologies. the very small viewing angle of these devices provide a very high luminous intensity. features ? untinted non diffused lens utilizing ultrabright a llngap and ingan technol- ogy very high luminous intensity very small emission angle high operating temperature: t j (chip junction tem- perature) up to 125 c for allngap devices luminous intensity and color categorized for each packing unit esd-withstand voltage: 2 kv acc. to mil std 883 d, method 3015.7 for allngap, 1 kv for ingan applications interior and exterior lighting outdoor led panels, displays instrumentation and front panel indicators central high mounted stop lights (chmsl) for motor vehicles replaces incandescent lamps traffic signals and signs light guide design parts table absolute maximum ratings t amb = 25 c, unless otherwise specified tlcr5800 , tlcy5800 , TLCTG5800 , tlcb5800 part color, luminous intensity te c h n o l o g y tlcr5800 red, i v > 7500 mcd allgap on gaas tlcy5800 ye l l o w, i v > 5750 mcd allgap on gaas TLCTG5800 true green, i v > 2400 mcd ingan on sic tlcb5800 blue, i v > 750 mcd ingan on sic parameter tes t co nd iti on part symbol value unit reverse voltage v r 5 v dc forward current t amb 85c tlcr5800 i f 50 ma t amb 85c tlcr5800 i f 50 ma t amb 60c TLCTG5800 i f 30 ma t amb 60c TLCTG5800 i f 30 ma
www.vishay.com 2 document number 83178 rev. 2, 03-apr-03 vishay tlc.58.. vishay semiconductors optical and electrical characteristics t amb = 25 c, unless otherwise specified red tlcr5800 1) in one packing unit i vmax. /i vmin. 1.6 surge forward current t p 10 s tlcr5800 i fsm 1 a t p 10 s tlcr5800 i fsm 1 a t p 10 s TLCTG5800 i fsm 0.1 a t p 10 s TLCTG5800 i fsm 0.1 a power dissipation t amb 85c tlcr5800 p v 135 mw t amb 85c tlcr5800 p v 135 mw t amb 60c TLCTG5800 p v 135 mw t amb 60c TLCTG5800 p v 135 mw junction temperature tlcr5800 t j 125 c tlcr5800 t j 125 c TLCTG5800 t j 100 c TLCTG5800 t j 100 c operating temperature range t amb - 40 to + 100 c storage temperature range t stg - 40 to + 100 c soldering temperature t 5 s, 2 mm from body t sd 260 c thermal resistance junction/ ambient r thja 300 k/w parameter test condition part symbol min ty p. max unit luminous intensity 1) i f = 50 ma tlcr5800 i v 7500 20000 dominant wavelength i f = 50 ma d 611 616 622 nm peak wavelength i f = 50 ma p 622 nm spectral bandwidth at 50 % i rel max i f = 50 ma ? 18 nm angle of half intensity i f = 50 ma ? 4 deg forward voltage i f = 50 ma v f 2.1 2.7 v reverse voltage i r = 10 a v r 5 v temperature coefficient of v f i f = 50 ma tc vf - 3.5 mv/k temperature coefficient of d i f = 50 ma tc d 0.05 nm/k parameter test condition part symbol value unit
vishay tlc.58.. document number 83178 rev. 2, 03-apr-03 vishay semiconductors www.vishay.com 3 yellow tlcy5800 1) in one packing unit i vmax. /i vmin. 1.6 pure green 1) in one packing unit i vmax. /i vmin. 1.6 blue tlcb5800 1) in one packing unit i vmax. /i vmin. 1.6 parameter tes t co nd iti on part symbol min ty p. max unit luminous intensity 1) i f = 50 ma tlcy5800 i v 5750 14000 mcd dominant wavelength i f = 50 ma d 585 590 597 nm peak wavelength i f = 50 ma p 593 nm spectral bandwidth at 50 % i rel max i f = 50 ma ? 17 nm angle of half intensity i f = 50 ma ? 4 deg forward voltage i f = 50 ma v f 2.1 2.7 v reverse voltage i r = 10 a v r 5 v temperature coefficient of v f i f = 50 ma tc vf - 3.5 mv/k temperature coefficient of d i f = 50 ma tc d 0.1 nm/k parameter tes t co nd iti on part symbol min ty p. max unit luminous intensity 1) i f = 30 ma TLCTG5800 i v 2400 7000 mcd dominant wavelength i f = 30 ma d 515 525 535 nm peak wavelength i f = 30 ma p 520 nm spectral bandwidth at 50 % i rel max i f = 30 ma ? 37 nm angle of half intensity i f = 30 ma ? 4 deg forward voltage i f = 30 ma v f 3.9 4.5 v reverse voltage i r = 10 a v r 5 v temperature coefficient of v f i f = 30 ma tc vf - 4.5 mv/k temperature coefficient of d i f = 30 ma tc d 0.02 nm/k parameter tes t co nd iti on part symbol min ty p. max unit luminous intensity 1) i f = 30 ma tlcb5800 i v 750 2500 mcd dominant wavelength i f = 30 ma d 462 470 476 nm peak wavelength i f = 30 ma p 464 nm spectral bandwidth at 50 % i rel max i f = 30 ma ? 25 nm angle of half intensity i f = 30 ma ? 4 deg forward voltage i f = 30 ma v f 3.9 4.5 v reverse voltage i r = 10 a v r 5 v temperature coefficient of v f i f = 30 ma tc vf - 5.0 mv/k temperature coefficient of d i f = 30 ma tc d 0.02 nm/k
www.vishay.com 4 document number 83178 rev. 2, 03-apr-03 vishay tlc.58.. vishay semiconductors typical characteristics (t amb = 25 c unless otherwise specified) figure 1. power dissipation vs. ambient temperature figure 2. power dissipation vs. ambient temperature figure 3. forward current vs. forward voltage 0 20 40 60 80 100 120 140 160 0 20406080100120 t amb ? ambient temperature ( c) 16708 p ?power dissipation (mw) v yellow red 0 20 40 60 80 100 120 140 160 0 102030405060708090100 t amb ? ambient temperature ( c ) 16709 p ?power dissipation (mw) v blue truegreen 0 10 20 30 40 50 60 70 80 90 100 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 v f ? forward voltag e(v) 15974 f i ?f orward current ( ma ) red yellow figure 4. forward current vs. ambient temperature figure 5. forward current vs. ambient temperature figure 6. forward current vs. forward voltage 0 10 20 30 40 50 60 0 20406080100120 t amb ? ambient temperature ( c ) 16710 yellow red i ?forward current ( ma ) f 0 10 20 30 40 50 60 0 102030405060708090100 t amb ? ambient temperature ( c ) 16711 blue truegreen i ?forward current ( ma ) f 0 10 20 30 40 50 60 70 80 90 100 2.5 3.0 3.5 4.0 4.5 5.0 5.5 v f ? forward voltage ( v ) 16040 f i ? forward current ( ma ) blue truegreen
vishay tlc.58.. document number 83178 rev. 2, 03-apr-03 vishay semiconductors www.vishay.com 5 figure 7. relative luminous flux vs. forward current figure 8. relative luminous flux vs. forward current figure 9. relative intensity vs. wavelength 0.01 0.10 1.00 10.00 1 10 100 i f ? forward current ( ma ) 15978 i ? relative luminous intensity vrel red 0.01 0.10 1.00 10.00 1 10 100 i f ? forward current ( ma ) 16042 blue vrel i ? relative luminous intensity 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 570 580 590 600 610 620 630 640 650 660 670 ? wavelength ( nm ) 16007 i ? relative luminous intensity vrel i f = 50 ma red figure 10. relative luminous flux vs. forward current figure 11. relative luminous flux vs. forward current figure 12. relative intensity vs. wavelength v rel 0.01 0.10 1.00 10.00 1 10 100 i f - forward current ( ma ) 15979 yellow i - relative luminous intensity 0.01 0.10 1.00 10.00 1 10 100 i f ? forward current ( ma ) 16039 true green vrel i ? relative luminous intensity 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 540 550 560 570 580 590 600 610 620 630 640 ? wavelength ( nm ) 16008 i ? relative luminous intensity vrel i f = 50 ma yellow
www.vishay.com 6 document number 83178 rev. 2, 03-apr-03 vishay tlc.58.. vishay semiconductors package dimensions in mm figure 13. relative intensity vs. wavelength 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 460 480 500 520 540 560 580 600 620 ? wavelength ( nm ) 16068 i ? relative luminous intensity vrel i f = 30 ma true green figure 14. relative intensity vs. wavelength 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 400 420 440 460 480 500 520 540 560 ? wavelength ( nm ) 17539 i f = 30 ma blue i ? relative intensity rel 9511476
vishay tlc.58.. document number 83178 rev. 2, 03-apr-03 vishay semiconductors www.vishay.com 7 ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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